Research on the influence of total dose on the short-circuit and avalanche characteristics of SiC MOSFET power devices

Miao Chen; Lipei Zhang; Xinyu Sun; Zan Li; Chenglong Sui

doi:10.54254/2977-3903/11/2024114

Article Information

Received: 13 September 2024

Published: 13 September 2024

DOI: https://doi.org/10.54254/2977-3903/11/2024114

Article Type: Research Article

Cite this article

Chen,M.;Zhang,L.;Sun,X.;Li,Z.;Sui,C. (2024). Research on the influence of total dose on the short-circuit and avalanche characteristics of SiC MOSFET power devices. Advances in Engineering Innovation,11,24-30.

Data availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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About this Volume

Volume Title: AEI Vol.11

Part of Series: Advances in Engineering Innovation

ISSN: 2977-3903 (Print) / 2977-3911 (Online)

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